【英文标准名称】:VentilationofHealthCareFacilities
【原文标准名称】:卫生保健设施的通风系统
【标准号】:ANSI/ASHRAE/ASHE170d-2010
【标准状态】:现行
【国别】:美国
【发布日期】:2010
【实施或试行日期】:
【发布单位】:美国国家标准学会(US-ANSI)
【起草单位】:ANSI
【标准类型】:()
【标准水平】:()
【中文主题词】:空气调节装置;冷却空气;排放物;工程设计;废气;过滤器;输送设备;医疗卫生事业;个人保健;公共卫生;质量;热环境系统;通风;通风系统
【英文主题词】:Airconditioninginstallations;Coolingair;Discharges;Engineeringdesign;Exhaustgases;Filters;Handlingunits;Healthservices;Personalhealth;Publichealth;Quality;Thermalenvironmentsystems;Ventilation;Ventilationsystems
【摘要】:Basedonrecentresearch,thisproposedaddendumreducesthelowerlimitofthedesignhumidityrangeforeightspacetypeslistedinStandard170-2008:onespaceintheDIAGNOSTICANDTREATMENTclassificationandsevenintheSURGERYANDCRITICALCAREclassification..Fortheseeightspaces,whichareintendedforshort-termpatienttreatmentstays,thisaddendumproposestoreducethelowerdesignhumiditylimitfrom30%to20%RH.
【中国标准分类号】:Q76
【国际标准分类号】:91_140_30
【页数】:
【正文语种】:英语


【英文标准名称】:TestMethodforQuantifyingTungstenSilicideSemiconductorProcessFilmsforCompositionandThickness
【原文标准名称】:定量分析硅化钨半导体加工膜组分和厚度的标准试验方法
【标准号】:ASTMF1894-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.17
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:定量分析;硅化钨分析;背散射分析;金属膜;组分
【英文主题词】:analysisoftungstensilicide;backscatteringanalysis;composition;metallizationfilms;quantitativeanalysis;RBS;Wsix
【摘要】:ThistestmethodcanbeusedtoensureabsolutereproducibilityofWSixfilmdepositionsystemsoverthecourseofmanymonths.Thetimespanofmeasurementsisessentiallythelifeofmanyprocessdepositionsystems.ThistestmethodcanbeusedtoqualifynewWSixdepositionsystemstoensureduplicabilityofexistingsystems.Thistestmethodisessentialforthecoordinationofglobalsemiconductorfabricationoperationsusingdifferentanalyticalservices.Thistestmethodallowssamplesfromvariousdepositionsystemstobeanalyzedatdifferentsitesandtimes.Thistestmethodisthechosencalibrationtechniqueforavarietyofanalyticaltechniques,including,butnotlimitedto:5.3.1Electronspectroscopyforchemicalanalysis(ESCAorXPS),5.3.2Augerelectronspectroscopy(AES),5.3.3Fouriertransforminfraredredspectroscopy(FTIR),5.3.4Secondaryionmassspectrometry(SIMS),and5.3.5Electrondispersivespectrometry(EDS)andparticleinducedx-rayemission(PIXE).1.1Thistestmethodcoversthequantitativedeterminationoftungstenandsiliconconcentrationsintungsten/silicon(WSIx),semiconductorprocessfilmsusingRutherfordBackscatteringSpectrometry(RBS).(1)ThistestmethodalsocoversthedetectionandquantificationofimpuritiesinthemassrangefromphosphorusA(31atomicmassunits(amu)toantimony(122amu).1.2Thistestmethodcanbeusedfortungstensilicidefilmspreparedbyanydepositionorannealingprocesses,orboth.Thefilmmustbeauniformfilmwithanarealcoveragegreaterthantheincidentionbeam(~2.5mm).1.3Thistestmethodaccuratelymeasureshefollowingfilmproperties:silicon/tungstenratioandvariationswithdepth,tungstendepthprofilethroughoutfilm,WSIx,filmthickness,argonconcentrations(ifpresent),presenceofoxideonsurfaceofWSIxfilms,andtransitionmetalimpuritiestodetectionlimitsof1x1014atoms/cm2.1.4Thistestmethodcandetectabsolutedifferencesinsiliconandtungstenconcentrationsof+/-3and+/-1atomicpercent,respectively,measuredfromdifferentsamplesinseparateanalyses.relativevariationsinthetungstenconcentrationindepthcanbedetectedto+/-0.2atomicpercentwithadepthresolutionof+/-70A.1.5ThistestmethodsupportsandassistsinqualifyingWSIxfilmsbyelectricalresistivitytechniques.1.6ThistestmethodcanbeperformedforWSIxfilmsdepositedonconductingorinsulatingsubstrates.1.7ThistestmethodisusefulforWSIxfilmsbetween20and400mmwithanarealcoverageofgreaterthan1by1mm.1.8Thistestmethodisnon-destructivetothefilmtotheextentofsputtering.1.9Astatisticalprocesscontrol(SPC)ofWSIxfilmshasbeenmonitoredsince1993withreproducibilityto+/-4%.1.10ThistestmethodproducesaccuratefilmthicknessesbymodelingthefilmdensityoftheWSIxfilmasWSI2(hexagonal)plusexcesselementalSI2.Themeasuredfilmthicknessisalowerlimittotheactualfilmthicknesswithanaccuracylessthan10%comparedtoSEMcross-sectionmeasurements(see13.4)1.11Thistestmethodcanbeusedtoanalyzefilmsonwholewafersupto300mmwithoutbreakingthewafers.Thesitesthatcanbeanalyzedmayberestrictedtoconcentricringsnearthewaferedgesfor200-mmand300-mmwafers,dependingonsystemcapabilities.1.12Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.ThereaderisreferencedtoSection8ofthistestmethod......
【中国标准分类号】:H82
【国际标准分类号】:29_045
【页数】:7P.;A4
【正文语种】: